NTMYS021N06CLTWG
onsemi
onsemi
MOSFET N-CH 60V 9.8A/27A 4LFPAK
$2.06
Available to order
Reference Price (USD)
1+
$2.06400
500+
$2.04336
1000+
$2.02272
1500+
$2.00208
2000+
$1.98144
2500+
$1.9608
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTMYS021N06CLTWG from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's NTMYS021N06CLTWG for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2V @ 16µA
- Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
Related Products
Alpha & Omega Semiconductor Inc.
AON7292
Microchip Technology
APT58M50JU3
onsemi
PCP1405-TD-H
Infineon Technologies
IPAW70R600CEXKSA1
Infineon Technologies
AUIRFZ44NS
Diodes Incorporated
DMTH4014SPSWQ-13
Renesas Electronics America Inc
RJK6012DPP-00#T2
Infineon Technologies
SPW11N60C3
Fairchild Semiconductor
FDI9406-F085
Infineon Technologies