NVH4L045N065SC1
onsemi
onsemi
SIC MOS TO247-4L 650V
$6.99
Available to order
Reference Price (USD)
1+
$6.99047
500+
$6.9205653
1000+
$6.8506606
1500+
$6.7807559
2000+
$6.7108512
2500+
$6.6409465
Exquisite packaging
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Upgrade your designs with the NVH4L045N065SC1 by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the NVH4L045N065SC1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
- Vgs(th) (Max) @ Id: 4.3V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
- Vgs (Max): +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
- FET Feature: -
- Power Dissipation (Max): 187W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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