NVMFS021N10MCLT1G
onsemi
onsemi
PTNG 100V LL SO8FL
$0.40
Available to order
Reference Price (USD)
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$0.40040
500+
$0.396396
1000+
$0.392392
1500+
$0.388388
2000+
$0.384384
2500+
$0.38038
Exquisite packaging
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The NVMFS021N10MCLT1G from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's NVMFS021N10MCLT1G for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 42µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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