NVMFWS025P04M8LT1G
onsemi
        
                                onsemi                            
                        
                                MV8 40V P-CH LL IN S08FL PACKAGE                            
                        $0.41
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $0.41061
                                        500+
                                            $0.4065039
                                        1000+
                                            $0.4023978
                                        1500+
                                            $0.3982917
                                        2000+
                                            $0.3941856
                                        2500+
                                            $0.3900795
                                        Exquisite packaging
                            Discount
                            TT / Paypal / Credit Card / Western Union / Money Gram
                            
                    Optimize your power electronics with the NVMFWS025P04M8LT1G single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the NVMFWS025P04M8LT1G combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.                
            Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 255µA
- Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
