NVMFWS040N10MCLT1G
onsemi
onsemi
PTNG 100V LL SO8FL
$0.42
Available to order
Reference Price (USD)
1+
$0.41613
500+
$0.4119687
1000+
$0.4078074
1500+
$0.4036461
2000+
$0.3994848
2500+
$0.3953235
Exquisite packaging
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The NVMFWS040N10MCLT1G from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's NVMFWS040N10MCLT1G for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 36W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
- Package / Case: 8-PowerTDFN, 5 Leads
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