NVMFWS3D0P04M8LT1G
onsemi
onsemi
MV8 P INITIAL PROGRAM
$1.51
Available to order
Reference Price (USD)
1+
$1.51477
500+
$1.4996223
1000+
$1.4844746
1500+
$1.4693269
2000+
$1.4541792
2500+
$1.4390315
Exquisite packaging
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Upgrade your designs with the NVMFWS3D0P04M8LT1G by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the NVMFWS3D0P04M8LT1G is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V
- Vgs(th) (Max) @ Id: 2.4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 171W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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