NVMYS029N08LHTWG
onsemi
onsemi
T8 80V LL LFPAK
$0.76
Available to order
Reference Price (USD)
1+
$0.75705
500+
$0.7494795
1000+
$0.741909
1500+
$0.7343385
2000+
$0.726768
2500+
$0.7191975
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NVMYS029N08LHTWG from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's NVMYS029N08LHTWG for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
Related Products
IXYS
IXFQ8N85X
Renesas Electronics America Inc
2SK1093-E
Diodes Incorporated
DMNH6069SFVWQ-7
Toshiba Semiconductor and Storage
TK2P90E,RQ
Toshiba Semiconductor and Storage
TK13P25D,RQ
Infineon Technologies
ISZ0702NLSATMA1
Renesas Electronics America Inc
2SK3712(1)-AZ
onsemi
NVMFS6H848NWFT1G
Infineon Technologies
BSC883N03LS G
IXYS Integrated Circuits Division