NVMYS1D7N04CT1G
onsemi
onsemi
T6 40V SL AIZU SINGLE NCH LFPAK
$12.40
Available to order
Reference Price (USD)
1+
$12.40330
500+
$12.279267
1000+
$12.155234
1500+
$12.031201
2000+
$11.907168
2500+
$11.783135
Exquisite packaging
Discount
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Enhance your electronic projects with the NVMYS1D7N04CT1G single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's NVMYS1D7N04CT1G for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 36.6A (Ta), 190A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 210µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3125 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 107.1W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
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