NX138BKWX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 210MA SOT323
$0.25
Available to order
Reference Price (USD)
1+
$0.25000
500+
$0.2475
1000+
$0.245
1500+
$0.2425
2000+
$0.24
2500+
$0.2375
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NX138BKWX by Nexperia USA Inc. is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Nexperia USA Inc. for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 266mW (Ta), 1.33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
Related Products
onsemi
NTB5405NT4G
Infineon Technologies
IPA80R1K4CEXKSA1
IXYS
IXTA86N20T
onsemi
FDMS030N06B
Microchip Technology
APL502J
Toshiba Semiconductor and Storage
TK11A55D(STA4,Q,M)
Infineon Technologies
IRFB3407ZPBF
Infineon Technologies
BSC882N03MSG
EPC
EPC2029
onsemi