NXH010P120MNF1PG
onsemi
onsemi
PIM F1 SIC HALFBRIDGE 1200V 10MO
$135.97
Available to order
Reference Price (USD)
1+
$135.96714
500+
$134.6074686
1000+
$133.2477972
1500+
$131.8881258
2000+
$130.5284544
2500+
$129.168783
Exquisite packaging
Discount
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Upgrade your electronic designs with the NXH010P120MNF1PG by onsemi, a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the NXH010P120MNF1PG ensures energy efficiency and robust performance. onsemi's commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
- Power - Max: 250W (Tj)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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