NXH020F120MNF1PTG
onsemi
onsemi
PIM F1 SIC FULL BRIDGE 1200V 20M
$152.73
Available to order
Reference Price (USD)
1+
$152.73000
500+
$151.2027
1000+
$149.6754
1500+
$148.1481
2000+
$146.6208
2500+
$145.0935
Exquisite packaging
Discount
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The NXH020F120MNF1PTG from onsemi is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the NXH020F120MNF1PTG provides reliable performance in demanding environments. Choose onsemi for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
- Power - Max: 119W (Tj)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 22-PIM (33.8x42.5)
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