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RJK0230DPA-00#J5A

Renesas Electronics America Inc
RJK0230DPA-00#J5A Preview
Renesas Electronics America Inc
POWER FIELD-EFFECT TRANSISTOR
$1.74
Available to order
Reference Price (USD)
1+
$1.74000
500+
$1.7226
1000+
$1.7052
1500+
$1.6878
2000+
$1.6704
2500+
$1.653
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 20A, 50A
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V
  • Power - Max: 15W, 35W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-WPAK-D

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