NXH020P120MNF1PG
onsemi
onsemi
PIM F1 SIC HALFBRIDGE 1200V 20MO
$104.98
Available to order
Reference Price (USD)
1+
$104.98429
500+
$103.9344471
1000+
$102.8846042
1500+
$101.8347613
2000+
$100.7849184
2500+
$99.7350755
Exquisite packaging
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Optimize your electronic projects with the NXH020P120MNF1PG from onsemi, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the NXH020P120MNF1PG ensures top-notch performance. onsemi's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
- Power - Max: 119W (Tj)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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