NXH160T120L2Q2F2S1G
onsemi
onsemi
PIM POWER MODULE
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The NXH160T120L2Q2F2S1G from onsemi is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the NXH160T120L2Q2F2S1G is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose onsemi's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Level Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 181 A
- Power - Max: 500 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 160A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 38.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 56-PIM/Q2PACK (93x47)
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