NXH350N100H4Q2F2SG
onsemi
onsemi
IC MODULE PIM 350A 1000V
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The NXH350N100H4Q2F2SG from onsemi exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the NXH350N100H4Q2F2SG in megawatt-level wind turbine converters. With onsemi's proven track record, the NXH350N100H4Q2F2SG represents the future of power semiconductor modules.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Three Level Inverter
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 303 A
- Power - Max: 592 W
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 375A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 24.146 nF @ 20 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 42-PIM/Q2PACK (93x47)
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