NXH400N100H4Q2F2SG
onsemi
onsemi
MASS MARKET 250KW 1500V Q2 PACK
$186.00
Available to order
Reference Price (USD)
1+
$186.00000
500+
$184.14
1000+
$182.28
1500+
$180.42
2000+
$178.56
2500+
$176.7
Exquisite packaging
Discount
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onsemi's NXH400N100H4Q2F2SG stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the NXH400N100H4Q2F2SG enables higher power density in MRI gradient amplifiers. Choose onsemi for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Level Inverter
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 409 A
- Power - Max: 959 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 26.093 nF @ 20 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 42-PIM/Q2PACK (93x47)
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