VS-GT300FD060N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 379A INT-A-PAK
$670.54
Available to order
Reference Price (USD)
12+
$524.24417
Exquisite packaging
Discount
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Vishay General Semiconductor - Diodes Division's VS-GT300FD060N sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the VS-GT300FD060N in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Vishay General Semiconductor - Diodes Division to deliver cutting-edge IGBT solutions with the VS-GT300FD060N power module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Level Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 379 A
- Power - Max: 1250 W
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 300A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 23.3 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Dual INT-A-PAK (4 + 8)
- Supplier Device Package: Dual INT-A-PAK
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