FS25R12KE3GBPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2B-311
$91.60
Available to order
Reference Price (USD)
1+
$91.60000
500+
$90.684
1000+
$89.768
1500+
$88.852
2000+
$87.936
2500+
$87.02
Exquisite packaging
Discount
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Infineon Technologies's FS25R12KE3GBPSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the FS25R12KE3GBPSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Power - Max: 145 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
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