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NXV90EPR

Nexperia USA Inc.
NXV90EPR Preview
Nexperia USA Inc.
NXV90EP/SOT23/TO-236AB
$0.46
Available to order
Reference Price (USD)
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$0.46000
500+
$0.4554
1000+
$0.4508
1500+
$0.4462
2000+
$0.4416
2500+
$0.437
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 340mW (Ta), 2.1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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