P3M171K0T3
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 1700V 6A TO-220-3
$6.10
Available to order
Reference Price (USD)
1+
$6.10000
500+
$6.039
1000+
$5.978
1500+
$5.917
2000+
$5.856
2500+
$5.795
Exquisite packaging
Discount
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Meet the P3M171K0T3 by PN Junction Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The P3M171K0T3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose PN Junction Semiconductor.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 100W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-2L
- Package / Case: TO-220-2
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