PBHV8115T,215
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN 150V 1A TO236AB
$0.47
Available to order
Reference Price (USD)
3,000+
$0.17820
6,000+
$0.16830
15,000+
$0.16335
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the PBHV8115T,215 Bipolar Junction Transistor (BJT) by Nexperia USA Inc.. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the PBHV8115T,215 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Nexperia USA Inc. for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
- Power - Max: 300 mW
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
Related Products
onsemi
2SD1815S-E
NTE Electronics, Inc
NTE383
Diodes Incorporated
2DB1182Q-13
Sanyo
NSV40300MZ4T1G
Panjit International Inc.
MMBTA92_R1_00001
Rohm Semiconductor
2SAR513PT100
onsemi
BC517-D74Z
Microchip Technology
2N5880
Diodes Incorporated
BCP5616TA
Solid State Inc.