PD20010-E
STMicroelectronics
STMicroelectronics
TRANS RF N-CH FET POWERSO-10RF
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Engineered for excellence, the PD20010-E RF MOSFET from STMicroelectronics is a standout in the Discrete Semiconductor Products category, specifically within Transistors - FETs, MOSFETs - RF. This transistor offers unparalleled high-frequency performance, with features such as ultra-low RDS(on), high gain bandwidth, and superior noise immunity. It's the perfect solution for RF switching and amplification in applications like microwave ovens, RFID readers, and automotive radar systems. The PD20010-E's robust construction ensures long-term reliability even in harsh environments. Choose STMicroelectronics's PD20010-E for your RF projects and benefit from industry-leading technology that enhances signal clarity and power efficiency.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2GHz
- Gain: 11dB
- Voltage - Test: 13.6 V
- Current Rating (Amps): 5A
- Noise Figure: -
- Current - Test: 150 mA
- Power - Output: 10W
- Voltage - Rated: 40 V
- Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Supplier Device Package: PowerSO-10RF (Formed Lead)
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