PD57006TR-E
STMicroelectronics
STMicroelectronics
TRANSISTOR RF POWERSO-10
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the PD57006TR-E, a cutting-edge RF MOSFET transistor from STMicroelectronics, engineered for the Discrete Semiconductor Products market. This product falls under the Transistors - FETs, MOSFETs - RF classification and boasts superior high-frequency characteristics, including minimal signal loss and outstanding power handling capabilities. Its advanced design ensures optimal performance in critical RF applications. The PD57006TR-E is particularly suited for use in satellite communication systems, broadcast transmitters, and medical imaging equipment. With features like enhanced linearity and robust ESD protection, this MOSFET is a top choice for engineers designing next-generation RF circuits. STMicroelectronics's commitment to quality ensures that the PD57006TR-E meets the highest industry standards for performance and durability.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 945MHz
- Gain: 15dB
- Voltage - Test: 28 V
- Current Rating (Amps): 1A
- Noise Figure: -
- Current - Test: 70 mA
- Power - Output: 6W
- Voltage - Rated: 65 V
- Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Supplier Device Package: PowerSO-10RF (Formed Lead)
Related Products
NXP USA Inc.
BF556A,215
Broadcom Limited
ATF-34143-BLKG
NXP USA Inc.
MRF6VP21KHR6
NXP USA Inc.
MRF6S19100HSR5
onsemi
FW359-TL-E
Ampleon USA Inc.
BLF6G20LS-180RN:11
NXP USA Inc.
A2I25H060GNR1
NXP USA Inc.
MRFE6S8046NR1
Ampleon USA Inc.
BLF2425M7LS100U
NXP USA Inc.