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PDTB113ZK,115

NXP USA Inc.
PDTB113ZK,115 Preview
NXP USA Inc.
TRANS PREBIAS PNP 250MW SMT3
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Specifications

  • Product Status: Obsolete
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 1 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK

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