Shopping cart

Subtotal: $0.00

PDTB123EUF

Nexperia USA Inc.
PDTB123EUF Preview
Nexperia USA Inc.
TRANS PREBIAS PNP 0.425W
$0.05
Available to order
Reference Price (USD)
10,000+
$0.04420
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 2.2 kOhms
  • Resistor - Emitter Base (R2): 2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 140 MHz
  • Power - Max: 300 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323

Related Products

Diodes Incorporated

DDTA143ZE-7-F

Toshiba Semiconductor and Storage

RN2411,LF

Fairchild Semiconductor

FJV4102RMTF

Rohm Semiconductor

DTA113ZEFRATL

Toshiba Semiconductor and Storage

RN1116,LXHF(CT

Nexperia USA Inc.

PDTA114EQCZ

Nexperia USA Inc.

PDTA143ZU,115

Nexperia USA Inc.

PDTC144VT,215

Top