PDTC114EE,115
NXP USA Inc.
NXP USA Inc.
TRANS PREBIAS NPN 150MW SC75
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Optimize your PCB layout with NXP USA Inc.'s space-saving PDTC114EE,115. This pre-configured bipolar transistor eliminates external biasing components while delivering 250mW power dissipation. Applications span from smart home appliances to automotive lighting systems. NXP USA Inc. combines 20+ years of semiconductor expertise with cutting-edge silicon technology in this robust solution.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
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