PDTC123ES,126
NXP USA Inc.
NXP USA Inc.
TRANS PREBIAS NPN 500MW TO92-3
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Upgrade your designs with NXP USA Inc.'s PDTC123ES,126, a pre-biased BJT transistor engineered for efficiency. This single bipolar transistor features optimized current gain and minimal leakage, perfect for low-power circuits. Its compact package suits space-constrained applications like IoT devices, automotive modules, and power management systems. NXP USA Inc. delivers superior discrete semiconductor solutions meeting rigorous industry standards for durability and performance.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 500 mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
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