PDTC123JQCZ
Nexperia USA Inc.
Nexperia USA Inc.
PDTC123JQC/SOT8009/DFN1412D-3
$0.26
Available to order
Reference Price (USD)
1+
$0.26000
500+
$0.2574
1000+
$0.2548
1500+
$0.2522
2000+
$0.2496
2500+
$0.247
Exquisite packaging
Discount
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Upgrade your designs with Nexperia USA Inc.'s PDTC123JQCZ, a pre-biased BJT transistor engineered for efficiency. This single bipolar transistor features optimized current gain and minimal leakage, perfect for low-power circuits. Its compact package suits space-constrained applications like IoT devices, automotive modules, and power management systems. Nexperia USA Inc. delivers superior discrete semiconductor solutions meeting rigorous industry standards for durability and performance.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 230 MHz
- Power - Max: 360 mW
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1412D-3
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