PHK13N03LT,518
Nexperia USA Inc.
        
                
                                Nexperia USA Inc.                            
                        
                                MOSFET N-CH 30V 13.8A 8SO                            
                        $0.12
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $0.12480
                                        500+
                                            $0.123552
                                        1000+
                                            $0.122304
                                        1500+
                                            $0.121056
                                        2000+
                                            $0.119808
                                        2500+
                                            $0.11856
                                        Exquisite packaging
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                    Discover the PHK13N03LT,518 from Nexperia USA Inc., a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the PHK13N03LT,518 ensures reliable performance in demanding environments. Upgrade your circuit designs with Nexperia USA Inc.'s cutting-edge technology today.                
            Specifications
- Product Status: Obsolete
 - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30 V
 - Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
 - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
 - Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
 - Vgs(th) (Max) @ Id: 2V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 5 V
 - Vgs (Max): ±20V
 - Input Capacitance (Ciss) (Max) @ Vds: 752 pF @ 15 V
 - FET Feature: -
 - Power Dissipation (Max): 6.25W (Tc)
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-SO
 - Package / Case: 8-SOIC (0.154", 3.90mm Width)
 
