PHKD3NQ10T,518
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET 2N-CH 100V 3A 8SOIC
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Enhance your circuit designs with the PHKD3NQ10T,518, a premium Transistors - FETs, MOSFETs - Arrays product from Nexperia USA Inc.. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the PHKD3NQ10T,518 delivers consistent and reliable operation. Nexperia USA Inc.'s dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 20V
- Power - Max: 2W
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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