PJD35P03_L2_00001
Panjit International Inc.
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
$0.62
Available to order
Reference Price (USD)
1+
$0.62000
500+
$0.6138
1000+
$0.6076
1500+
$0.6014
2000+
$0.5952
2500+
$0.589
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the PJD35P03_L2_00001 from Panjit International Inc., a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the PJD35P03_L2_00001 ensures reliable performance in demanding environments. Upgrade your circuit designs with Panjit International Inc.'s cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 35W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SIHP28N65E-GE3
Texas Instruments
CSD22205L
IXYS
IXTK120N25P
Torex Semiconductor Ltd
XP232N0301TR-G
Nexperia USA Inc.
PSMN1R5-30BLEJ
Texas Instruments
TPIC5421LNE
Nexperia USA Inc.
PSMN5R6-100BS,118
Vishay Siliconix
IRFR9014TRPBF
Panjit International Inc.
PJA3463_R1_00001
STMicroelectronics