PJE8408_R1_00001
Panjit International Inc.
Panjit International Inc.
SOT-523, MOSFET
$0.43
Available to order
Reference Price (USD)
1+
$0.43000
500+
$0.4257
1000+
$0.4214
1500+
$0.4171
2000+
$0.4128
2500+
$0.4085
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the PJE8408_R1_00001 single MOSFET from Panjit International Inc.. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the PJE8408_R1_00001 combines cutting-edge technology with Panjit International Inc.'s renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523 Flat Leads
- Package / Case: SC-89, SOT-490
Related Products
onsemi
NTF3055-160T3
Fairchild Semiconductor
HUF75637P3
Infineon Technologies
IQE006NE2LM5ATMA1
Vishay Siliconix
IRF840LCSPBF
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJD20N06A-F1-0000HF
Sanyo
MCH3383-TL-H
NXP USA Inc.
PMT760EN,135
Microchip Technology
TN5335K1-G
Diodes Incorporated
DMN65D8L-7
Vishay Siliconix