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PJQ1906_R1_00001

Panjit International Inc.
PJQ1906_R1_00001 Preview
Panjit International Inc.
MOSFET N-CH 30V 300MA DFN-3L
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-DFN (1x0.6)
  • Package / Case: 3-UFDFN

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