PJS6461-AU_S1_000A1
Panjit International Inc.
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
$0.76
Available to order
Reference Price (USD)
1+
$0.76000
500+
$0.7524
1000+
$0.7448
1500+
$0.7372
2000+
$0.7296
2500+
$0.722
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the PJS6461-AU_S1_000A1 by Panjit International Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The PJS6461-AU_S1_000A1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Panjit International Inc..
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6
- Package / Case: SOT-23-6
Related Products
Toshiba Semiconductor and Storage
TW045N120C,S1F
Texas Instruments
CSD19535KCS
NXP Semiconductors
BUK662R5-30C,118
Infineon Technologies
BSC027N10NS5ATMA1
Infineon Technologies
IPDH4N03LAG
Diodes Incorporated
DMTH6016LFVW-13
onsemi
FQP47P06
Alpha & Omega Semiconductor Inc.
AOSS32334C
STMicroelectronics
STD13NM60N
onsemi