PMEM4010ND,115
NXP USA Inc.
NXP USA Inc.
TRANS NPN 40V 1A SC74
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Enhance your circuit designs with the PMEM4010ND,115 Bipolar Junction Transistor (BJT) from NXP USA Inc.. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The PMEM4010ND,115 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NXP USA Inc. to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN + Diode (Isolated)
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
- Power - Max: 600 mW
- Frequency - Transition: 150MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SC-74
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