PMH850UPEH
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 30V 600MA DFN0606-3
$0.37
Available to order
Reference Price (USD)
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$0.37000
500+
$0.3663
1000+
$0.3626
1500+
$0.3589
2000+
$0.3552
2500+
$0.3515
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Discover the PMH850UPEH from Nexperia USA Inc., a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the PMH850UPEH ensures reliable performance in demanding environments. Upgrade your circuit designs with Nexperia USA Inc.'s cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 62.2 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta), 2.23W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN0606-3 (SOT8001)
- Package / Case: 3-XFDFN
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