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PMPB55ENEAX

Nexperia USA Inc.
PMPB55ENEAX Preview
Nexperia USA Inc.
MOSFET N-CH 60V 4A DFN2020MD-6
$0.48
Available to order
Reference Price (USD)
3,000+
$0.23460
6,000+
$0.22140
15,000+
$0.20820
30,000+
$0.19896
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V
  • FET Feature: -
  • Power Dissipation (Max): 1.65W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad

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