PMV35EPER
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 30V 5.3A TO236AB
$0.58
Available to order
Reference Price (USD)
3,000+
$0.11150
6,000+
$0.10600
15,000+
$0.09775
30,000+
$0.09225
75,000+
$0.08400
Exquisite packaging
Discount
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Upgrade your designs with the PMV35EPER by Nexperia USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the PMV35EPER is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 793 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 480mW (Ta), 1.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
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