SCTH35N65G2V-7AG
STMicroelectronics
STMicroelectronics
SICFET N-CH 650V 45A H2PAK-7
$19.85
Available to order
Reference Price (USD)
1+
$19.85000
500+
$19.6515
1000+
$19.453
1500+
$19.2545
2000+
$19.056
2500+
$18.8575
Exquisite packaging
Discount
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Meet the SCTH35N65G2V-7AG by STMicroelectronics, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SCTH35N65G2V-7AG stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose STMicroelectronics.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
- Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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