PMV48XPA2R
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 20V 4A TO236AB
$0.39
Available to order
Reference Price (USD)
1+
$0.39000
500+
$0.3861
1000+
$0.3822
1500+
$0.3783
2000+
$0.3744
2500+
$0.3705
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PMV48XPA2R from Nexperia USA Inc. redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the PMV48XPA2R offers the precision and reliability you need. Trust Nexperia USA Inc. to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
- Rds On (Max) @ Id, Vgs: 49mOhm @ 4A, 8V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Infineon Technologies
BSZ0702LSATMA1
Diodes Incorporated
DMP6110SFDF-7
onsemi
MCH3377-TL-H
Vishay Siliconix
SQ4435EY-T1_GE3
Vishay Siliconix
SIHG33N60EF-GE3
onsemi
FQP12N60C
onsemi
FDPF7N60NZ
IXYS
IXFK80N50P
Nexperia USA Inc.
BSS87,115
Infineon Technologies