PMWD20XN,118
NXP USA Inc.
NXP USA Inc.
MOSFET 2N-CH 20V 10.4A 8TSSOP
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The PMWD20XN,118 by NXP USA Inc. is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the PMWD20XN,118 provides reliable operation under stringent conditions. NXP USA Inc.'s innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10.4A
- Rds On (Max) @ Id, Vgs: 22mOhm @ 4.2A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 16V
- Power - Max: 4.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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