PMZB790SN,315
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 60V 650MA DFN1006B-3
$0.09
Available to order
Reference Price (USD)
1+
$0.09000
500+
$0.0891
1000+
$0.0882
1500+
$0.0873
2000+
$0.0864
2500+
$0.0855
Exquisite packaging
Discount
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Enhance your electronic projects with the PMZB790SN,315 single MOSFET from NXP USA Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust NXP USA Inc.'s PMZB790SN,315 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 940mOhm @ 300mA, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.37 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006B-3
- Package / Case: SC-101, SOT-883
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