PQMD3Z
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP 50V 6DFN
$0.06
Available to order
Reference Price (USD)
5,000+
$0.06188
Exquisite packaging
Discount
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The PQMD3Z by Nexperia USA Inc. is a cutting-edge pre-biased BJT array designed for high-performance applications. Its unique architecture provides superior current handling and thermal dissipation, making it ideal for power electronics and RF modules. Commonly employed in aerospace, defense, and consumer electronics, this transistor array offers exceptional reliability. Nexperia USA Inc.'s state-of-the-art production facilities ensure that the PQMD3Z delivers consistent results under extreme conditions. Engineers trust this product for its precision, durability, and ease of integration into complex systems.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230MHz, 180MHz
- Power - Max: 230mW
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1010B-6
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