PQMH10Z
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 2NPN DFN1010B-6
$0.33
Available to order
Reference Price (USD)
5,000+
$0.06188
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with Nexperia USA Inc.'s PQMH10Z, a high-reliability pre-biased BJT array. This discrete semiconductor solution offers matched transistor pairs with integrated bias networks, ensuring optimal performance in amplification and switching tasks. The PQMH10Z is perfect for use in audio equipment, power supplies, and automotive control systems. With Nexperia USA Inc.'s rigorous quality control, each array provides long-term stability and minimal distortion. Compact, efficient, and easy to integrate, the PQMH10Z is the go-to choice for engineers seeking dependable transistor solutions.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230MHz
- Power - Max: 350mW
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1010B-6
Related Products
onsemi
NSBC115EPDXV6T1G
Toshiba Semiconductor and Storage
RN4990(TE85L,F)
onsemi
EMC2DXV5T1
Diodes Incorporated
DCX124EU-7-F
Toshiba Semiconductor and Storage
RN4907,LXHF(CT
Nexperia USA Inc.
NHUMH2F
Nexperia USA Inc.
PUMD2,125
onsemi
NSVBC143ZPDXV6T5G
Diodes Incorporated
ADC143TUQ-13
NXP USA Inc.