PSMN2R0-30YLDX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
$1.36
Available to order
Reference Price (USD)
1,500+
$0.47520
3,000+
$0.44352
7,500+
$0.42134
10,500+
$0.40550
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PSMN2R0-30YLDX from Nexperia USA Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Nexperia USA Inc.'s PSMN2R0-30YLDX for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2969 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 142W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
Panjit International Inc.
PJQ4464AP-AU_R2_000A1
Vishay Siliconix
SQJA64EP-T1_GE3
Infineon Technologies
IPD320N20N3GATMA1
STMicroelectronics
STL11N65M5
Infineon Technologies
IPD25N06S4L30ATMA2
onsemi
FQPF4N90C
Vishay Siliconix
SISS27ADN-T1-GE3
Central Semiconductor Corp
CEDM7002AE TR PBFREE
Diodes Incorporated
ZVP3306A
Fairchild Semiconductor