Shopping cart

Subtotal: $0.00

NTH4LN067N65S3H

onsemi
NTH4LN067N65S3H Preview
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
$6.66
Available to order
Reference Price (USD)
1+
$6.66000
500+
$6.5934
1000+
$6.5268
1500+
$6.4602
2000+
$6.3936
2500+
$6.327
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 3.9mA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 266W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4

Related Products

STMicroelectronics

STP7N60M2

Fairchild Semiconductor

RFD16N05LSM_NL

NXP USA Inc.

BUK7511-55B,127

Panjit International Inc.

PJQ1902_R1_00001

Infineon Technologies

SPB80N06SL2-7

Microchip Technology

VP0104N3-G

Alpha & Omega Semiconductor Inc.

AO6402A

Top