NTH4LN067N65S3H
onsemi

onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
$6.66
Available to order
Reference Price (USD)
1+
$6.66000
500+
$6.5934
1000+
$6.5268
1500+
$6.4602
2000+
$6.3936
2500+
$6.327
Exquisite packaging
Discount
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The NTH4LN067N65S3H by onsemi is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the NTH4LN067N65S3H is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 3.9mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 266W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4