NTH4LN067N65S3H
onsemi
         
                
                                onsemi                            
                        
                                POWER MOSFET, N-CHANNEL, SUPERFE                            
                        $6.66
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $6.66000
                                        500+
                                            $6.5934
                                        1000+
                                            $6.5268
                                        1500+
                                            $6.4602
                                        2000+
                                            $6.3936
                                        2500+
                                            $6.327
                                        Exquisite packaging
                            Discount
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                    The NTH4LN067N65S3H by onsemi is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the NTH4LN067N65S3H is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.                
            Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 3.9mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 266W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4

 
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                    