PSMN8R7-80PS,127
NXP Semiconductors
NXP Semiconductors
NEXPERIA PSMN8R7 - N-CHANNEL 80
$0.80
Available to order
Reference Price (USD)
1+
$1.73000
50+
$1.38020
100+
$1.20760
500+
$0.93652
1,000+
$0.73937
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PSMN8R7-80PS,127 from NXP Semiconductors redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the PSMN8R7-80PS,127 offers the precision and reliability you need. Trust NXP Semiconductors to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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