PTAB182002TCV2XWSA1
Infineon Technologies
Infineon Technologies
IC RF FET LDMOS 190W H-49248H-4
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the PTAB182002TCV2XWSA1 RF MOSFET from Infineon Technologies is a standout in the Discrete Semiconductor Products category, specifically within Transistors - FETs, MOSFETs - RF. This transistor offers unparalleled high-frequency performance, with features such as ultra-low RDS(on), high gain bandwidth, and superior noise immunity. It's the perfect solution for RF switching and amplification in applications like microwave ovens, RFID readers, and automotive radar systems. The PTAB182002TCV2XWSA1's robust construction ensures long-term reliability even in harsh environments. Choose Infineon Technologies's PTAB182002TCV2XWSA1 for your RF projects and benefit from industry-leading technology that enhances signal clarity and power efficiency.
Specifications
- Product Status: Obsolete
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
Related Products
NXP USA Inc.
A2T21H141W24SR3
Freescale Semiconductor
MRF6V3090NR1
NXP USA Inc.
MRF6S23140HSR5
NXP USA Inc.
SRF9030NR1
NXP USA Inc.
MRF6V2010GNR1
onsemi
3LP04MH-TL-E
Microchip Technology
VRF154FLMP
NXP USA Inc.
AFT26P100-4WGSR3
Infineon Technologies
PTFA211801EV5T350XWSA1
Harris Corporation