PTFA081501E V1
Infineon Technologies
Infineon Technologies
FET RF 65V 900MHZ H-30248-2
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the PTFA081501E V1, a state-of-the-art RF MOSFET transistor from Infineon Technologies, designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The PTFA081501E V1 combines cutting-edge semiconductor technology with Infineon Technologies's rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the PTFA081501E V1 into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 900MHz
- Gain: 18dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 950 mA
- Power - Output: 150W
- Voltage - Rated: 65 V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-30248-2
Related Products
NXP USA Inc.
MRF7S18170HR5
NXP USA Inc.
MMRF1311HR5
NXP USA Inc.
MRFE6S9130HSR3
Broadcom Limited
ATF-331M4-BLK
Infineon Technologies
PTFA240451E V1
Ampleon USA Inc.
BLF6G10L-40BRN,112
Ampleon USA Inc.
BLF2425M7L100J
Broadcom Limited
ATF-551M4-TR2
Ampleon USA Inc.
BLF6G10L-40BRN,118
NXP USA Inc.