PUMD9,165
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP 6TSSOP
$0.04
Available to order
Reference Price (USD)
1+
$0.03820
500+
$0.037818
1000+
$0.037436
1500+
$0.037054
2000+
$0.036672
2500+
$0.03629
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the versatility of Nexperia USA Inc.'s PUMD9,165, a pre-biased BJT array tailored for modern electronics. This transistor array combines high current gain with low saturation voltage, making it ideal for switching and linear amplification. Its compact design and integrated resistors save PCB space while enhancing reliability. The PUMD9,165 is widely used in IoT devices, medical equipment, and renewable energy systems. Nexperia USA Inc.'s advanced fabrication techniques guarantee consistent performance, even under high-stress conditions. Whether for prototyping or mass production, the PUMD9,165 offers a cost-effective solution for your semiconductor needs.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
Related Products
Nexperia USA Inc.
NHUMH10F
Diodes Incorporated
ADC124EUQ-7
onsemi
SMUN5112DW1T1G
Nexperia USA Inc.
PUMD12,115
Nexperia USA Inc.
PEMH24,115
Toshiba Semiconductor and Storage
RN2964(TE85L,F)
Toshiba Semiconductor and Storage
RN2905,LF(CT
Toshiba Semiconductor and Storage
RN2708,LF
Toshiba Semiconductor and Storage
RN4909,LXHF(CT
Toshiba Semiconductor and Storage